Microwave Engineering Europe - January/February 2008 - (Page 37)

PRODUCTS 37 Wideband driver amplifiers span DC to 65 GHz applications from military and space to radio and test A family of GaAs HEMT MMIC driver ampliﬁer and modulator driver ampliﬁer products in chip form from Hittite operate over the DC- to 65-GHz frequency band. Designated Hittite-Velocium, the driver ampliﬁers suit a wide range of applications, including microwave radio, military and space, ﬁber optic systems, wideband communication systems, VSAT, SATCOM and test instrumentation. The HMC-AUH256 is a GaAs MMIC HEMT four stage driver ampliﬁer which operates over 17.5 to 41 GHz while providing 21-dB of gain and +20-dBm output power at 1-dB gain compression. This ampliﬁer also provides output IP3 of +27-dBm and +23-dBm of saturated output power while requiring only 295 mA from a +5-V bias supply. The HMC-AUH249 and the HMC-AUH232 are GaAs MMIC HEMT distributed ampliﬁer dies which provide typical 3-dB bandwidths of 35 and 45 GHz respectively. HMC-AUH249 provides 15-dB of gain and +21-dBm of output power at 1-dB gain compression, while requiring only 200 mA from a +5-V bias supply. It exhibits excellent gain and phase ripple beyond 25 GHz, while providing a minimum output of 8 V peakto-peak. The HMC-AUH232 provides 14-dB of small signal gain and +16.5-dBm output power at 1-dB gain compression, while requiring only 180 mA from a +5-V bias supply. It exhibits excellent gain and phase ripple to 40 GHz, while providing up to 8-V peak-to-peak output swing with low jitter. The HMC-AUH312 is a GaAs MMIC HEMT distributed driver ampliﬁer die which operates between 500 MHz and 65 GHz while providing a typical 3-dB bandwidth in excess of 65 GHz. This ampliﬁer provides 10-dB of small signal gain and maximum output amplitude of 2.5 V peak to peak, which makes it ideal for use in broadband wireless, ﬁber optic communications and test equipment applications. www.mwee.com/205907453 Solid-state GaAs amplifier delivers high linearity The SM09296-47L from Stealth Microwave is a 925-960-MHz solid state GaAs ampliﬁer designed for the cellular/GSM telephony market. Its compact size and ultra high linearity make it ideally suited for systems using CDMA, TDMA, or any high dynamic range multi-carrier applications. The P1dB is +47 dBm, the linear gain is 58 dB, and the gain change over temperature is ±0.5 dB. Stealth Microwave’s proprietary pre-distortion technique allows for an OIP3 of +66 dBm. The unit comes standard in modular form or as a rack mountable ampliﬁer. www.mwee.com/205907364 Microwave Engineering ● January/February 2008 ● www.mwee.com 037_MWEE.indd Sec1:37 25/01/08 10:58:51 http://www.mwee.com/205907453 http://www.Omniyig.com http://www.Omniyig.com http://www.mwee.com/205907364 http://www.mwee.com

Table of Contents Feed for the Digital Edition of Microwave Engineering Europe - January/February 2008

Microwave Engineering Europe - January/February 2008 Contents News Comment Radio: Raising the Bar for the Radio: Making 802.11n Work Cover Feature: The RF-System-In-Package Trend - Efficient Design with Advanced Design System 2008 Wireless Sensor Networks: The Zigbee PRO Feature Set: More of a Good Thing Very Fast Measurements of Wireless Devices with Small Antennas in Reverberation Chambers WiMAX Update 2008 Bridging the Gap from the CMOS DSP to the Antenna in OFDM Systems Products Calendar

Microwave Engineering Europe - January/February 2008

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