Microwave Engineering Europe - March 2008 - (Page 18)

18 RF AMPLIFIERS Latest advances in RF ampliﬁers include a CMOS PA operating at 77 GHz and signiﬁcant advances in PAs for WiMAX and broadband applications Edited by Jean-Pierre Joosting ujitsu Laboratories has said it has developed a millimeter-waveband power ampliﬁer (PA) using a standard 90-nm CMOS process technology. Fujitsu Labs (Tokyo, Japan) applied CMOS modeling technology and design techniques to minimize high-frequency signal loss and get the extreme operational frequencies out of the process technologies, the company said. Fujitsu claimes the circuit is the ﬁrst CMOS-based PA that operates at 77 GHz. The technology realizes CMOS radio frequency front-end circuitry that includes a power ampliﬁer, thereby enabling integration with baseband circuitry on a single chip, for use in millimeterwave automotive radar systems. Standard CMOS technology The application of standard CMOS technology in millimeter-wave circuitry has been problematic due to signal loss. In order to boost the gain in an ampliﬁer, a number of factors that are not evident on a circuit diagram, such as parasitic capacitance, need to be accurately reﬂected. In addition, signal loss in a matching circuit needs to be suppressed to enable maximum ampliﬁcation performance. Fujitsu Labs developed two technologies that make it possible to apply standard CMOS technology to millimeter-wave ampliﬁers. Fujitsu Labs established a transistor model that shows the operating characteristics at millimeter-waveband and developed parameter-extraction method technology. To keep the circuitry compact, Fujitsu Labs developed a “short stub” matching circuit and integrated it with the power-supply circuitry in a way that would further reduce signal losses. This reduced the amount of chip space required by the matching circuit to one-tenth previous levels, and also reduced signal loss to 0.4 dB. The resulting CMOS PA operates at 77 GHz with 8.5-dB gain and 6.3 decibel milliwatts (6.3 dBm) saturated output power. Furthermore, a separate PA operating at F 60 GHz was developed and achieved 8.3 dB of gain and 10.6 dBm saturated output power. Inexpensive automotive radar Fujitsu Labs’ new technology makes it possible to implement 77 GHz automotive radars using inexpensive standard CMOS technologies. These developments could also be used to extend the transmission range of wireless communications systems in the 60 GHz band. Furthermore, by combining baseband circuitry with RF front-end circuitry on one chip, millimeter-waveband transceiver chips — which had been expensive to produce in the past — can now be made considerably smaller. As a result, widespread application of millimeterwaveband technologies in both automotive radar systems and wireless communications systems is anticipated in the future. www.mwee.com/206104893 TriQuint shrinks quad-band edge PA modules by 50 percent TriQuint Semiconductor has developed the ﬁrst two members of its HADRON II PA module family, the TQM7M5012 and TQM7M5005, for 3G wedge phones. The second-generation EDGE PAs are designed using TriQuint’s CuFlip copper bump technology, improving RF performance while reducing current consumption to provide longer device battery life. Debuting with a 5 x 5 mm footprint, the TQM7M5012 and TQM7M5005 are 50 percent smaller than the previous generation, providing handset manufacturers additional board space to add other rich features. Available in EDGE-Polar and EDGE-Linear versions, both products have been optimized to deliver optimum current consumption in the critical GMSK mode, which signiﬁcantly improves handset battery life. The TQM7M5012 for EDGE-Polar applications is aligned with Qualcomm’s newest 3G multimode transceivers. Compared to the previous generation, TQM7M5012 offers even lower Rx band noise power level to help eliminate external components in the radio. The TQM7M5005 is designed to work with some leading 2.5G and 3G transceivers that require a linear power ampliﬁer. TriQuint has developed RF radio application and evaluation boards for both the TQM7M5012 and the TQM7M5005 to demonstrate the features and compatibility of the devices, enabling phone manufacturers to shorten handset development time. www.mwee.com/206801250 RF driver ampliﬁer reduces power, size and cost in WiMAX and wireless applicationst Analog Devices (ADI), has introduced the ADL5321, a high-performance, low power RF driver ampliﬁer that claims to deliver the Microwave Engineering Europe ● March 2008 ● www.mwee.com 018_019_MWEE.indd 18 22/02/08 16:10:48 http://www.mwee.com/206104893 http://www.mwee.com/206801250 http://www.mwee.com

Table of Contents Feed for the Digital Edition of Microwave Engineering Europe - March 2008

Microwave Engineering Europe - March 2008 News Contents Comment Wireless Infrastructure: A Direct Conversion I/Q Demodulatordrives Favorable Basestation Cost-performance Metrics Wireless Infrastructure: Mobile World Set to Reshape the Internet RF Amplifiers: Latest Advances in RF Amplifiers Include a CMOS PA Operating at 77 GHz and Significant Advances in PAs for WiMAX and Broadband Applications Many Applications Still Require Unique Performance Benefits of BeO ACE Automated Circuit Extraction Returns to Real Design by Exploring Design Alternatives and Changes in Seconds Exceeding the Standard for Wireless Sensor Networks Products Calendar

Microwave Engineering Europe - March 2008

For optimal viewing of this digital publication, please enable JavaScript and then refresh the page. If you would like to try to load the digital publication without using Flash Player detection, please click here.