Microwave Engineering Europe - March 2008 - (Page 19)

RF AMPLIFIERS 19 industry’s best combination of power and performance in 2.3-GHz to 4.0-GHz wireless infrastructure designs for LTE, WiMAX and WiBro applications. The ADL5321 increases signal linearity, and consumes less power, relative to competing RF ampliﬁers. When implemented in a system, such as a base station, radio, or satellite equipment, it eliminates up to four external passive components, which eases design complexity and enables RF designers to more quickly bring cost-effective, highly-efﬁcient wireless infrastructure equipment to market. With an output OIP3 of 40 dBm and output compression point of 25 dBm at 2600 MHz, the ADL5321 driver provides the highest linear output drive level for a given transmitted output power. Consuming just 84 mA, which is a 30 percent to 50 percent power savings over competing devices, the device also features on-chip active bias circuitry, which further reduces the external component count. The driver ampliﬁer’s Class 3A, + 4 kV, ESD (electrostatic discharge) rating also provides a high degree of robustness for high volume manufacturing. For lower frequency applications the ADL5321 has a companion product, the ADL5320, which operates across a 400 MHz to 2700 MHz frequency range. The ADL5320 also offers the advantageous combination of high performance and low power consumption. www.mwee.com/206104640 RF power ampliﬁer targets 2.3-2.4 GHz WiMAX frequency band Anadigics has released the AWM6422 power ampliﬁer, which operates in the 2.3-2.4 GHz frequency band allocated for broadband mobile wireless services, further expanding the company’s portfolio of leading edge products for WiMAX and WiBro (Korea) systems. A variation of the company’s widely accepted AWM6423, which was introduced last year, the AWM6422 is a high performance device with exceptional linearity and efﬁciency at high levels of output power. Designed for WiMAX and WiBro applications in the 2.3-2.4 GHz band, it supports the IEEE 802.16e-2005 wireless standard as well as the IEEE 802.16d2004 and the ETSI EN301-021 standards. Optimized for use in mobile devices, the AWM6422 requires a nominal +3.3 V supply, but also provides enhanced RF performance when used with supply voltages as high as +4.2V. In addition to using the company’s patented, industry-leading InGaP-Plus™ technology, the AWM6422 power ampliﬁer features: — greater than 30 dB of RF gain; — integrated 25 dB attenuator; — integrated output power detector; — 50 Ohm matched RF ports for reduced external component count; — RoHS compliance; — and low EVM contribution at high output power levels, namely: • 2.5 percent EVM at +22 dBm (+3.3 V supply), • 4 percent EVM at +23.5 dBm (+3.3 V supply), • 2.5 percent EVM at +23.5 dBm (+4.2 V supply), and • 4 percent EVM at +25 dBm (+4.2 V supply). www.mwee.com/206801293 Microwave Engineering ● March 2008 ● www.mwee.com 018_019_MWEE.indd 19 22/02/08 16:11:06 http://www.mwee.com/206104640 http://www.mwee.com/206801293 http://www.lpkf.com/LPKF-LDS http://www.lpkf.com/LPKF-LDS http://www.lpkf.com http://www.mwee.com

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Microwave Engineering Europe - March 2008 News Contents Comment Wireless Infrastructure: A Direct Conversion I/Q Demodulatordrives Favorable Basestation Cost-performance Metrics Wireless Infrastructure: Mobile World Set to Reshape the Internet RF Amplifiers: Latest Advances in RF Amplifiers Include a CMOS PA Operating at 77 GHz and Significant Advances in PAs for WiMAX and Broadband Applications Many Applications Still Require Unique Performance Benefits of BeO ACE Automated Circuit Extraction Returns to Real Design by Exploring Design Alternatives and Changes in Seconds Exceeding the Standard for Wireless Sensor Networks Products Calendar

Microwave Engineering Europe - March 2008

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