Microwave Engineering Europe - June 2008 - (Page 5)

TriQuint manufactures leading-edge RF power discretes for both saturated and linear power applications including cellular BTS, CATV, point-to-point radio, WLAN and WiMAX. TriQuint’s industry-leading process portfolio includes HV-HBT, HFET, pHEMT, LDMOS and GaN. Power discretes are available ranging from 500mW to greater than 200W as bare die and in a variety of package types to provide maximum flexibility and optimal cost / performance advantages. Take a Peek Inside HIGH POWER GaAs FETs Description 1.2mm Pwr pHEMT 1W HFET 2.4mm HFET 2mm Pwr pHEMT 2.4mm Pwr pHEMT 2W HPA, HFET 4.8mm HFET 4W HPA, HFET 4mm Pwr pHEMT 4.8mm Pwr pHEMT 9.6mm HFET 5W HPA, HFET 6.0mm Pwr pHEMT 8mm Pwr pHEMT 10W HPA, HFET 10W HPA, HFET 12mm Pwr pHEMT Frequency Range (GHz) DC - 20 DC - 6 DC - 12 DC - 12 DC - 20 4.9 - 6 DC - 10.5 4.9 - 6 DC - 12 DC - 20 DC - 10.5 3.5 DC - 20 DC - 12 2.6 3.3 - 3.8 DC - 12 P1dB (Psat) / OIP3 (dBm) (32) / – 31 / 43 31.5 / – (34.5) / – (35) / – 34 / 47 34 / – 36 / – (37.5) / – (38) / – 37 / – 37.5 / 49 (39) / – (40.2) / – 40 / 51 40 / 51 (42) / – Gain (dB) 13 16 10 11 13 11 8.5 11 11 13 9.5 11 12.5 11 12 9 11 PAE (%) 56 – 56 55 58 – 53 – 55 58 52 – 53 55 – – 52 Voltage / Current (V / mA) 12 / 90 8 / 200 8 / 100 12 / 150 12 / 180 7 - 9 / 480 8 / 200 7 - 9 / 700 - 800 12 / 300 12 / 360 8.5 / 520 8 / 750 12 / 448 12 / 600 8 / 1200 7 - 9 / 1200 12 / 900 Package Style Die SOT89 Die Die Die SG-A2-2 Die SG-A2-2 Die Die Die SG-A4-2 Die Die SG-A4-2 SG-A3-2 Die Part Number TGF2022-12 TGF2961-SD TGF4240-SCC TGF2021-02 TGF2022-24 TGA2922-SG TGF4250-SCC TGA2921-SG TGF2021-04 TGF2022-48 TGF4260-SCC TGA2925-SG TGF2022-60 TGF2021-08 TGA2924-SG TGA2923-SG TGF2021-12 HIGH POWER RF LDMOS TRANSISTORS Description LDMOS PA, 180W IS95 Push Pull LDMOS PA, 130W GSM / EDGE LDMOS PA, 125W GSM / EDGE LDMOS PA, 180W CDMA / GSM / EDGE Push Pull LDMOS PA, 180W WCDMA Push Pull LDMOS PA, 180W MMDS WCDMA Push Pull NOTES: * = New Frequency Range (GHz) 865 - 895 921 - 960 1805 - 1880 1930 - 1990 2110 - 2170 2535 - 2655 P1dB / IMD3 (dBm) / (dBc) 52.6 / -30 51.1 / -60 51 / -60 52.6 / – 52.6 / -36 52.6 / -36 Gain (dB) 15.5 18 13.5 14.5 14 12 Efficiency (%) 58 55 50 – 26 20 Voltage / Current (V / mA) 28 / 2x850 26 / 1000 26 / 1200 28 / 2x800 28 / 2x800 28 / 2x850 Package Style EF EU, EF EU, EF EF EF EF Part Number AGR09180E* AGR09130E* AGR18125E* AGR19180E* AGR21180E* AGR26180E* This is a subset of the total selection of products available from TriQuint. If you are unable to locate the product you need, please contact your local sales representative or the factory for more information. Visit www.triquint.com/rf and register for TriQuint product & process updates. © 6-08 TriQuint Semiconductor, Inc. http://www.triquint.com/rf http://www.triquint.com/rf

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Microwave Engineering Europe - June 2008 Contents Comment News Cover Feature Designing and Simulating a Wireless LAN Antenna 60GHz: Achieving the Ultimate Wireless Dream New Radar Developments Include HFETs to Challenge DMOS/LDMOS and a 77-GHz CMOS PA for Automotive Applications Testing Raises Concerns Over 802.11-Based High-Speed Bluetooth IP2 & IP3 Design Considerations with Direct Conversion I/Q Demodulator Receiver Products Calendar

Microwave Engineering Europe - June 2008

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