Microwave Engineering Europe - November 2007 - (Page 41)

PRODUCTS 41 Driver amplifier family for point-to-point radio covers three bands over 4.9 to 15.4 GHz Tyco Electronics has introduced a family of M/ACOM driver amplifiers for point-to-point (P2P) radios. The driver amplifier family covers allocated point-to-point bands from 4.9 to 15.4 GHz: the MAAM-007523 amplifier covering 4.9 to 8.5 GHz, and the MAAM-007524 amplifier covering 10.0 to 15.4 GHz. The family features +32 dBm IP3 (third-order intercept point) linearity and P1dB levels ranging from 19 to 21 dBm. They are self-biased and can operate with drain supplies ranging from 4.5 to 8.0 V to optimize system performance including linearity, gain and power efficiency. The large frequency range supported by these amplifiers, as well as their typical gain flatness across individual P2P bands being ±0.5 dB, makes them ideal components for end-to-end P2P communications. All die are fabricated using the company’s MSAG (Multifunction Self-Aligned Gate) process, which features a rugged polyimide coating and no air bridges. This coating produces a rugged chip for high assembly yields. MTTF is one million hours at 170 °C junction temperature. Each amplifier part is available in bare die and plastic packaged PQFN (surface mount) options. The amplifiers are RoHS compliant and compatible with a 260 °C reflow temperature. www.macom.com 0.18 micron silicon radio platform reduces costs by up to 50 percent compared to GaAs A 0.18-micron Silicon Radio platform from Jazz Semiconductor allows complete integration of the radio in a wireless device on a single piece of silicon integrating the transceiver, antenna switch, power amplifier (PA) and controllers, eliminating the need for discrete GaAs devices. A key ability of the company’s 0.18-micron RF CMOS process (CA18) and its 0.18micron SiGe BiCMOS process (SBC18) is the ability to include an SOI option that enables the integration of the antenna switch, but, unlike other solutions, also enables the integration of the PA. The technology promises higher levels of integration, enabling die costs to be reduced by up to fifty percent compared with GaAs solutions. The Silicon Radio platform comprises the 0.18-micron base CMOS or SiGe BiCMOS with four modules: an SOI module for the integration of the antenna switch, a PA module with high-power SiGe or CMOS devices, an LNA module with SiGe low-noise devices, and a Passive module consisting of a suite of high quality passive elements for the realization of inter-stage filter and matching circuits. All the modules (including SOI) can be combined or used independently to achieve the right level of cost and integration and optimally address each market need. www.jazzsemi.com Microwave Engineering ● November 2007 ● www.mwee.com 041_MWEE.indd Sec1:41 26/10/07 12:39:16 http://www.jazzsemi.com http://www.macom.com http://www.jfwindustries.com http://www.jfwindustries.com http://www.mwee.com

Table of Contents Feed for the Digital Edition of Microwave Engineering Europe - November 2007

Microwave Engineering Europe - November 2007 Contents News Comment Metamaterials: Metamaterials Tackle Communications Wavelengths Microwave Components — EM tools: Microwave Component Design Easier With New EM and EDA Tools Cover Feature: RF Testing for OFDMA in LTE Base-Stations Startup Eyes Battery-Free Wireless Sensor Nets High-speed ADC Technology Paves the Way for Software Defined Radios Planning a WiMAX network: Maximising the ROI by Using Advanced Optimisation Tools Transporting Video Over Wireless Networks Ultrawideband Under the Gun Specifying the Proper SAW Filter Products Product Feature: RF Test Solution Supports Emerging 4x4 MIMO as Well as Multiple Commercial Standards Calendar

Microwave Engineering Europe - November 2007

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