Microwave Engineering Europe - November 2008 - (Page Cover3) SiC • RF Power • SiC • RF Power SILICON CARBIDE RF POWER DEVICES NEW ! SMALLEST SIZE! HIGHEST POWER! Highest Peak Power In Smallest Package! TM 0150SC-1250M 156 MHz Power Out: 1400 typ Power Gain: 9 dB Pulse Width: 300 μs Duty Cycle: 10% VSWR-T: 10:1 Freq: Efficiency: Bias: Package: Metallization: 60% 125V 0.9”x0.4” all AU 0405SC-1000M 405-450 MHz 1100 typ 8 dB 300 μs 10% 10:1 45% 125V 0.9”x0.4” all AU Meet the first two SiC RF power devices launched from Microsemi. Ready NOW for your next generation VHF and UHF radar and ISM systems! Check our specs for simplified solutions that can reduce your system size and part count. Our 0.9 x 0.4 inch package is 50% smaller than the highest power silicon BJT or LD/VDs you’ll find anywhere. • Single ended design • Simple splitting & combining • Extremely rugged for high system yield • Low drain current to reduce noise • High operating voltage for smaller power supplies • Long term reliability For detailed information contact us at: SiC@microsemi.com; or call 408-986-8031 x226. Visit Microsemi at Electronica, Munich, Stand A4.525 Microsemi and SiC logo are property of Microsemi Corporation. © 2008.
For optimal viewing of this digital publication, please enable JavaScript and then refresh the page. If you would like to try to load the digital publication without using Flash Player detection, please click here.