Microwave Engineering Europe - December 2008 - (Page 30) 30 PRODUCTS LTE remote radio head platform lowers CAPEX and OPEX Axis Network Technology (AxisNT) has launched a family of remote radio heads (RRH) for OEM deployment of LTE networks worldwide. The LTE platform, with 20 W output power, is based on the same innovative design principles as the companyÕs successful WiMAX RRH, which is already being manufactured and shipped in volume worldwide. The LTE RRHs provide 2 x 10 W at 64 QAM of diversity multi-carrier RF power using AxisIPRª advance amplifier technology, operating over the 2.3 to 2.7-GHz E-UTRA frequency bands. The RRH units can be customised to meet the specific interface and packaging requirements of the OEM. Designing LTE basestations using a distributed RRH approach with highly efficient digitalto-RF conversion and amplification considerably reduces both the CAPEX and OPEX of the overall system as well as maintenance costs, and accelerates time-todeployment. The use of an RRH allows the radio to be located alongside the antennas and physically separate from the basestation (BTS), removing the losses associated with long cable runs Ñ typically around 3 dB per cable Ñ by replacing them with an optical fibre data interface. Consequently a single MIMO RRH, with 10 W output power will provide greater coverage than a 40 W SISO ground based BTS, with power and energy consumption reduced to a fraction of the cost. The AxisNT RRH offers flexible multi-gigabit BTS connections, communicating via OBSAI, CPRI or custom OEM fibre interfaces. The companyÕs remote radio heads feature: automatic calibration for transmit, receive and PA bias control loops; OBSAI RP3-01 and CPRI V2 digital baseband interfaces with one or two optical connectors; high reliability including an advanced failure mode prediction capability, as well as inherent fibre and RF redundancy. Support for Adaptive Antenna Systems (AAS) and AISG v2.0 antenna control is provided, and the RRH unit features a compact, lightweight modular design in a die-cast enclosure, with solar shield for outdoor use. www.mwee.com/212100957 Phase locked oscillator achieves stability of within 1 ppm Featuring internal TCXO references, the APL-04 series phase locked oscillator (PLO) from AtlanTecRF provides high frequency stability without the need for an external system reference. The fundamental output frequency in the range 300 MHz to 14 GHz is generated using either a coaxial resonator or dielectric resonator, depending on the frequency. Applying the companyÕs PLL technology, it is locked to the TCXO reference to provide stability over a -20 to +70 degrees Celsius temperature range of better than ±1 ppm. Standard TCXO frequencies include 10, 25 and 50 MHz but almost any in-between frequency can be selected to provide the desired output frequency at integral multiples. The output power of all units is +13 dBm minimum as standard, while additional power levels up to +20 dB are available as options. Output power stability over temperature is just ±2 dB maximum. Spectral purity performance includes harmonics of -20 dBc minimum and -25 dBc typical, spurious of -80 dBc and typical phase noise of a 4 GHz unit of -110 dBc/Hz at 10 KHz offset. The internal regulator allows operation from input voltages in the range +11 to +16 V and the current draw is less that 300 mA. The regulator also deals adequately with any frequency pushing issues, while the RF output will work well into a 2.5:1 VSWR load. The size of the phase locked oscillator is industry standard at 2.25 x 2.25 x 0.62 inches (57.2 x 57.2 x 15.8 mm). The RF output connector is SMA female stainless steel, while a second SMA output connector is also provided to deliver the reference frequency, if required, to other parts of the userÕs system. One other important and standard feature is the TTL lock alarm output via filtered feedthrough connectors. It is anticipated that these small, rugged, compact and self-contained devices will find applications in a wide variety of satellite communications, defence, research and industrial microwave programmes. www.mwee.com/212000551 Distributed 1-W power amplifier covers DC to 6 GHz ideal for military EW, test and measurement equipment, and telecommunications applications Hittite Microwave Corporation has released chip and SMT GaAs pHEMT MMIC power ampliÞers, designated HMC637 and HMC637LP5 respectiveley, which are ideal for military EW, test & measurement equipment, and telecom applications from DC to 6 GHz. The HMC637 is a GaAs pHEMT MMIC power ampliÞer chip that is rated from DC to 6 GHz, and delivers 14 dB gain, +30 dBm saturated output power, and +41 dBm output IP3. The power ampliÞer also delivers consistent output IP3 and excellent gain ßatness of ±0.6 dB across its rated bandwidth. This versatile power ampliÞer chip requires no external matching components, occupies an area of 7.3 mm², and consumes only 400 mA from a +12 V supply. For applications where an SMT compatible solution is preferred, the HMC637LP5 offers similar performance to the HMC637, and is housed in a RoHS compliant 5x5 mm leadless QFN. Both the versions are ideal for military EW and ECM, test and measurement, and wideband telecom applications. www.mwee.com/212100706 Microwave Engineering Europe ● December 2008 ● www.mwee.com http://www.mwee.com/212100957 http://www.mwee.com/212000551 http://www.mwee.com/212100706 http://www.mwee.com
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