Microwave Engineering Europe - December 2008 - (Page 6) RFMD pHEMT Broadband Switches ® Low-Loss, High-Isolation, DC to 20 GHz SPST and SPDT Switch MMIC Die The portfolio of low-loss, high-isolation broadband single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) gallium arsenide (GaAs) switches are designed on the 0.5 μm pHEMT switch process from RFMD . The FMS2023, ® FMS2027, and FMS2029 offer absorptive properties from both ports (50 ohms terminations). This process technology offers leading-edge performance optimized for switch applications in the military, SATCOM, broadband communications, test and measurement, and fiber optics markets. SPECIFICATIONS Part Number FMS2023 FMS2024 FMS2027 FMS2029 Min -0.9 -1.6 -1.5 Insertion Loss at 10 GHz Typ Max Units -0.7 -1.1 -1.3 -1.4 dB dB dB dB Min - Isolation at DC-20 GHz Typ Max Units -50 -37 -42 -60 -43 -34 -40 -45 dB dB dB dB Min 25 22 21 23.5 P1dB at 10 GHz Typ Max 27 24 22.5 25.2 - Units dBm dBm dBm dBm -1.65 FEATURES • Low insertion loss • High isolation • Absorptive output in off-state (FMS2023, FMS2027, FMS2029) • All reflective design (FMS2024) • Excellent low-control voltage performance • Available in die form For complete specifications and samples, email chunt@rfmd.com. RFMD ® is a registered trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2008 RFMD. http://www.rfmd.com
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