Microwave Engineering Europe - January/February 2009 - (Page 28)

28 PRODUCTS RF filters for W-CDMA, LTE cellular basestations feature footprint reduced by 72 percent Two new block-type dielectric RF ﬁlters for telecoms basestation applications have been added to Murata’s GIGAFIL range. The ﬁlters have been designed for cellular basestation applications which use a digital pre-distortion ampliﬁer (DPD), as they feature a wide pass band and ﬂat ripple performance, which are required for DPD PA design. The ﬁlter’s small size (10.6 x 6.0 x 4.8mm) means they require 72 percent less mounting space compared to the company’s previous generation of ﬁlters for this application. The DFCL52G14LFHABTT1 is for use in W-CDMA Band1 DPD ampliﬁers, while the DFCL52G14LFHAA-TT1 High gain LNA covers 50- to 60-GHz employs GaAs MMICs for high reliability and repeatability The HLNAV-364 low noise amplifier (LNA) from Renaissance Electronics covers the frequency range from 50 to 65 GHz minimum and is usable over a wider range. It offers a minimum of 25 dB of gain over that range with a typical noise figure of 5 dB and P1dB of +13 dBm. The LNA bandwidth is matched to the frequency range of WR-15 waveguide-tocoax adapters allowing it to be used for broadband test setups. Gain flatness is typically ±2 dB. The LNA employs GaAs MMICs for high reliability and repeatability. A higher gain version of the amplifier is also available. Typical applications include test equipment, communications equipment and as a general purpose V-Band/60-GHz amplifier. The amplifier also features single-bias/internal-bias sequencing and internal voltage regulation. www.mwee.com/212902711 will be used in W-CDMA Band1 LTE DPD ampliﬁers. The ﬁlters’ highly sophisticated multi-pole design ensures high attenuation, and good selectivity. Both ﬁlters have a ripple of 0.4 dB maximum at f0 ±30 MHz and 1.2dB maximum at f0 ±65 MHz, producing the wide and ﬂat curves required at the pass band by DPD ampliﬁer designs. www.mwee.com/212501355 Multi-band multi-mode power amplifier targets FDD/TDD applications in 4G LTE handsets Skyworks Solutions claims the industry’s ﬁrst multi-mode and multiband frequency division duplex (FDD)/time division duplex (TDD) power ampliﬁer module (PAM) for fourth generation (4G) long term evolution (LTE) applications. It is also the ﬁrst product to speciﬁcally target LTE-TDD bands 38 and 40. LTE TDD is expected to become the dominant 4G standard mobile operators utilize in China and other parts of the world. According to Strategy Analytics, the global LTE handset market is expected to reach 150 million units by 2013. The SKY77441 is a fully matched 16-pin surface mount module developed for LTE FDD (Band 7) and TDD (Bands 38 and 40) applications and covers the 2.3 to 2.7 GHz range. It delivers over 26 dBm of linear power output with full LTE resource block allocation under either quadrature phase-shift keying (QPSK), or 16 quadrature amplitude modulations (QAM), and over Fully integrated Doherty amplifiers TD-SCDMA and WCDMA base station applications Fully integrated Doherty ampliﬁers from NXP Semiconductors, the BLD6G2150 and BLD6G22-50 for TDSCDMA and WCDMA base stations offer ease-of-design while delivering efﬁciency of over 40 percent at an average power of 10 W. This enables 35 percent lower power dissipation under multi-carrier signal operation compared to class AB ampliﬁers. The Doherty ampliﬁers are plug and play and can be applied in the same way as a standard class AB transistor, hence speeding time to market. They bring savings in form factor and design effort, while eliminating the need for extra tuning during manufacturing, providing signiﬁcant cost efﬁciencies during the development process of cellular base station power ampliﬁers. The BLD6G21-50 ampliﬁers incorporate an integrated Doherty concept leveraging the company’s state of the art GEN6 LDMOS technology speciﬁcally designed for TD-SCDMA operation at frequencies from 2010 MHz to 2025 MHz, whereas its twin device, the BLD6G22-50, operates at frequencies between 2110 MHz to 2170 MHz for W-CDMA transmission. Both main and peak devices and delay lines as well as the input splitter and output combiner are integrated into a standard transistor package with single input and output leads, thus minimizing required board space. The package has two additional pins, one of which is being used for external biasing purposes. www.mwee.com/212902728 ● 28 dBm of linear output power under wideband code division multiple access (WCDMA). Small and efﬁcient, the LTE FEM integrates the input and output matching networks, the power ampliﬁcation stages, and the power detection in a single 4- x 4- x 0.85-mm package. Integration of the PAM simpliﬁes the design of the 4G-compatible handset radios and data cards, as all the active radio frequency (RF) circuitry is optimized within the single module component. Based on an advanced indium gallium phosphide (InGaP) bipolar ﬁeld effect transistor (BiFET) design and the company’s Green™ packaging solutions, the SKY77441 also supports lowoperating voltage down to 3 V. www.mwee.com/212500830 Microwave Engineering Europe ● January/February 2009 www.mwee.com http://www.mwee.com/212902711 http://www.mwee.com/212501355 http://www.mwee.com/212902728 http://www.mwee.com/212500830 http://www.mwee.com

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Microwave Engineering Europe - January 2009 News Contents Comment Using KPIs to Ensure Quality in a Converging Network Amplifier Error Vector Magnitude Characterisation Using High-Speed Modular PXI Instruments GPS: Making a Play for Femtocells Accelerating Global WiMAX Adoption: The Move to Picocell and Femtocell Base Stations Addressing PA Efficiency for Multi-Mode Wideband Handset Applications Wi-Fi: Mobile Feature or Fundamental RAN? Products Calendar

Microwave Engineering Europe - January/February 2009

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