Microwave Engineering Europe - March 2009 - (Page 32) 32 PRODUCTS 200 W GaN HEMT targets applications up to 1.2 GHz For applications up to 1.2 GHz, the NPT1007 from Nitronex comprises two power transistors, 100 W each, in an industry standard four lead Gemini package. This small footprint allows easy combining of both transistors into a compact high power amplifier solution. After combining losses, the device achieves 200 W at 63 percent efficiency with 18.3 dB gain at 900 MHz. The NPT1007 is robust to an output mismatch of 10:1 while in saturation. The device has high gain and efficiency performance from 14 to 28 V, allowing Miniature WiFi power amplifier with integrated 50 Ohms I/O Claiming to be the world’s smallest wireless LAN power amplifier (PA), the 2- x 2-mm LX5516 from Microsemi features integrated 50 Ohm input and output matching circuits that optimize performance while significantly reducing design complexity, size and bill of materials costs. The LX5516 supports IEEE 802.11b/g/n WLAN applications in the 2.4- to 2.5 GHz frequency range, and further extends the company’s broad portfolio of WiFi and 802.16e WiMAX and WiBro PAs. All the device’s circuitry is packaged in an ultra-compact, 2- x 2- mm 12-lead MLP that eliminates the cost and complexity of external components otherwise required for input and output matching functionality. Other features include Pout of around 18 dBm for 3 percent EVM, 30 dB OFDM power gain and a temperature-compensated on-chip output power detector with wide dynamic range. According to the company, the PA eliminates the external passive components and additional design work typically required to optimally tune the transmit section of an 802.11/b/g/n design. www.mwee.com/213001497 designers to co-optimize power, thermal rise, efficiency and linearity. It is available in a thermally enhanced ceramic air cavity bolt-down package, and is lead-free and RoHS compliant. Production ready quantities are available. www.mwee.com/213000267 20 W chip attenuator achieves 1.3:1 VSWR up to 12 GHz International Manufacturing Services has announced the availability of its high power 2010 size chip attenuator designated VGX-2010WA. The attenuator features wraparound terminals for solder or epoxy attachment and will dissipate 20 W at a 100 degrees Celsius baseplate temperature. Standard impedance is 50 ohm and attenuation values to 30 dB are available including 0.5 dB increments. Achievable VSWR is 1.3:1 to 12 GHz depending on implementation LTE base station test targets R&D engineers real-time signal generation and channel emulation Agilent Technologies is offering what it claims is the first LTE real-time signal generation and channel emulation product for base station test. Agilent’s Signal Studio for 3GPP LTE software is designed for the PXB MIMO receiver tester, which is designed with what the company describes as the most up-to-date, versatile LTE signal creation and channel emulation capabilities. The N5106A PXB MIMO receiver tester, with its N7624B Signal Studio for 3GPP LTE, now supports advanced real-time LTE testing with HARQ (Hybrid Automatic Repeat Request) feedback from the device under test. This enables closed-loop testing with dynamically changing LTE test signals, which is essential for measuring receiver performance as defined in the 3GPP LTE specification. www.mwee.com/214502675 and attenuation accuracy starts at ±0.2dB. These attenuators are especially suited, but are not limited to, RF and microwave applications. www.mwee.com/214502780 Next generation high-voltage RF power transistors aim to reduce power consumption Freescale Semiconductor has introduced its next generation of laterally diffused metal oxide semiconductor (LDMOS) RF power transistors to meet demand for reduced power consumption in cellular transmitters. Building on its legacy of RF power transistor leadership, Freescale’s eighth generation high-voltage (HV8) RF Power LDMOS technology is engineered specifically to meet the demands of highdata rate applications such as W-CDMA and WiMAX, as well as emerging standards such as LTE and Multicarrier GSM. The portfolio of devices based on HV8 technology is optimized for operation in advanced ● power amplifier architectures, which includes Doherty used in combination with digital predistortion (DPD). A primary benefit of the technology is the increase in operating efficiency that helps reduce total power consumption. In addition, HV8 has been optimized to withstand the more demanding operating environments of advanced system architectures. Initial products will encompass power levels ranging from 100 W to 300 W. In addition, an over molded package lowers cost and covers the major frequency bands from 700 MHz to 2.7 GHz. www.mwee.com/214502676 Microwave Engineering Europe ● March 2009 www.mwee.com http://www.mwee.com/213000267 http://www.mwee.com/213001497 http://www.mwee.com/214502780 http://www.mwee.com/214502675 http://www.mwee.com/214502676 http://www.mwee.com
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