IEEE Awards Booklet - 2016 - 5
2016 ieee corPorate recoGnitions
IEEE Corporate Innovation Award
IEEE Ernst Weber Managerial
Leadership Award
Sponsored by IEEE
Sponsored by IEEE
intel Corporation
david Fairbank welch
For pioneering the use of high-k metal gate and tri-gate
transistor technologies in high-volume manufacturing
For leadership in enabling the growth of
cloud-based services and the Internet in
optical transport networks
Leading the semiconductor industry in developing revolutionary
transistor technologies and achieving early high-volume manufacturing of microprocessor products, Intel's high-k metal gate
and tri-gate transistor innovations have allowed the continuation of Moore's Law and enabled products with improved performance and lower power consumption. The semiconductor
industry had been scaling metal-oxide-semiconductor field-effect-transistors (MOSFETs) for more than four decades until the
early 2000s, when further scaling of traditional silicon dioxide/
polysilicon materials presented leakage problems. New materials
and structures would be needed for continued progress, and Intel's
Technology and Manufacturing Group was first to meet the challenge with its introduction of high-k metal gate transistors and
then with its tri-gate (FinFET) technology. Intel replaced most
of the traditional dielectric MOSFET materials with a high-k
hafnium-based dielectric to reduce leakage power, and metal gate
electrode materials replaced doped polysilicon to provide improved transistor performance. Intel was the first to manufacture
and ship these high-k metal gate transistors, beginning with its 45
nm technology in 2007. Intel then overcame the manufacturing
challenges of using tri-gate transistors to surpass the limitations of
planar MOSFETs.Tri-gate transistors feature channels on tall and
narrow silicon fins instead of a planar surface. With a steeper subthreshold slope, tri-gate transistors result in lower power leakage
and can operate at lower voltage for lower active power consumption. Intel was the first to ship microprocessors using tri-gate transistors in 2011 with its 22-nm technology. Intel's manufacturing
success with these transistor technologies fundamentally changed
the direction of the semiconductor industry. Other semiconductor companies have followed Intel's footsteps in developing highk and tri-gate products, and foundry companies have accelerated
efforts to meet the fabrications needs of their customers.
Headquartered in Santa Clara, CA, USA, Intel's Technology
and Manufacturing Group is led by Sohail U. Ahmed, senior vice
president and general manager, and Ann B. Kelleher, corporate
vice president and general manager.
A leader in driving technology innovations from concept to commercial success, David Fairbank Welch's contributions to optical devices for telecommunications networks have enabled the
growth of the Internet and cloud-based services, providing faster
communications for service providers, businesses, and consumers
around the world. As chief technology officer and vice president
of corporate development for Spectra Diode Labs,Welch played a
critical role in launching the first commercially available 980-nm
semiconductor pump laser for optical amplifiers. His design became the standard for pump lasers and enabled the proliferation of
dense-wave-division-multiplexed systems for long-haul communications networks that allowed service providers to increase network capacity to meet the demanding bandwidth requirements of
emerging Internet applications. In addition, Welch led the design,
development, and commercialization of high-power semiconductor lasers and solid-state lasers for a diversity of materials processing applications.Welch has proven that his vision of photonic integration improves performance and reliability while reducing cost
in telecommunication systems. He cofounded Infinera in 2001
and led the company in the architecture and development of the
most widely deployed photonic integrated circuit (PIC) in industry. PICs are highly functional optical subsystems on a chip
that overcome the data communications bottleneck between users
and servers in the cloud.Welch then led Infinera's next-generation
technology, which now serves as the foundation for the DTN-X
optical transport networking platform.Where the entire transmission capacity of the Internet in 2005 was less than 9 terabits (Tb),
DTN-X allows 9 Tb per second of long-haul capacity on a single
optical fiber. As president of Infinera, since 2013 Welch introduced
several new systems that make it easier for network operators to
automate the digital switching and optical transport layers of the
multi-Tb transport systems, including the industry's first superchannel reconfigurable optical add drop multiplexer and the first
500G flexible-grid super-channels.
An IEEE Fellow and recipient of the Institution of Engineering and Technology's J.J. Thomson Medal for Electronics (2013),
the Optical Society's John Tyndall Award (2011), and elected to
the U.S. National Academy of Engineering (2016),Welch is president of Infinera Corporation, Sunnyvale, CA, USA.
Scope: For an outstanding and exemplary innovation by an industrial entity, governmental or academic organization, or other corporate body, within the fields of interest to the IEEE.
Scope: For exceptional managerial leadership in the fields of interest
of the IEEE.
5 | 2016 IEEE AWARDS BooKLET
Table of Contents for the Digital Edition of IEEE Awards Booklet - 2016
IEEE Awards Booklet - 2016 - Cover1
IEEE Awards Booklet - 2016 - Cover2
IEEE Awards Booklet - 2016 - 1
IEEE Awards Booklet - 2016 - 2
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IEEE Awards Booklet - 2016 - 36
IEEE Awards Booklet - 2016 - Cover3
IEEE Awards Booklet - 2016 - Cover4
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