IEEE Circuits and Systems Magazine - Q2 2018 - 75

Ronald Tetzlaff is a Full Professor of Fundamentals of Electrical Engineering at the
Technische Universität Dresden, Germany. His scientific interests include problems in the theory of signals and systems,
stochastic processes, physical fluctuation phenomena, system modelling, system identification,
machine learning, mem-elements, memristive systems, Volterra systems, and Cellular Nonlinear Networks.
From 1999 to 2003 Ronald Tetzlaff was Associate Editor of
the IEEE, Transactions on Circuits and Systems: part I. He
was "Distinguished Lecturer" of the IEEE CAS Society
(2001-2002). He is a member of the scientific committee
of different international conferences. He was the chair of
the 7th IEEE International Workshop on Cellular Neural
Networks and their Applications (CNNA 2002) and organized several special sessions at circuit and systems related conferences. From 2005 to 2007 he was the chair of
the IEEE Technical Committee Cellular Neural Networks &
Array Computing. Ronald Tetzlaff is a member of the Informationstechnische Gesellschaft (ITG) and the German
Society of Electrical Engineers and of the German URSI
Committee. Ronald Tetzlaff is in the Editorial Board of the
International Journal of Circuit Theory and Applications
since 2007 and he is also in the Editorial Board of the IEEE,
Transactions on Circuits and Systems: part II since 2016.
He was Associate Editor of the AEÜ-International Journal of Electronics and Communications from 2008 to 2016.
Ronald Tetzlaff was the chair of the 18th IEEE Workshop on
Nonlinear Dynamics of Electronic Systems (NDES 2010),
the chair of the 5th International Workshop on Seizure Prediction (IWSP5 2012), the chair of the 21st European Conference on Circuit Theory and Design (ECCTD 2013), the
chair of the 5th Memristor and Memristive Symposium
2016, and of the 15th IEEE International Workshop on Cellular Nanoscale Networks and their Applications (CNNA
2016). Since 2014 her serves as the leader of working
group 2 (Memristor Theory, Modelling and Simulation) in
the EU COST action MemoCIS (IC 1401) on Memristors-
Devices, Models, Circuits, Systems and Applications. Ronald Tetzlaff serves as a reviewer for several journals and
for the European Commission.
Stephan Menzel was born in Bremen,
Germany. He received the Diploma degree in electrical engineering from
RWTH Aachen University, Aachen, Germany, in 2005. In 2012 he received the
Ph.D. degree in electrical engineering
from RWTH Aachen University, Aachen, Germany (summa cum laude). Since 2012 he works as senior scientist at
Forschungszentrum Juelich, Germany. He is head of the
simulation group at the Peter Grünberg Insitute (PGI-7).
sEcOnd quartEr 2018

His major research topic is the simulation and physical
modeling of resistive switching devices.
References
[1] L. O. Chua, "Memristor: The missing circuit element," IEEE Trans.
Circuit Theory, vol. 18, no. 5, pp. 507-519, 1971.
[2] L. O. Chua and S.-M. Kang, "Memristive devices and systems," Proc.
IEEE, vol. 64, no. 2, pp. 209-223, 1976.
[3] S. P. Adhikari, M. P. Sah, H. Kim, and L. O. Chua, "Three fingerprints
of memristor," IEEE Trans. Circuits Syst. I, vol. 60, no. 11, pp. 3008-3021,
Nov. 2013.
[4] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The
missing memristor found," Nature, vol. 453, pp. 80-83, 2008.
[5] T. Prodomakis, C. Toumazou, and L. O. Chua, "Two centuries of memristors," Nature Mater., vol. 11, pp. 478-481, 2012.
[6] R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Mater., vol. 6, pp. 833-840, 2007.
[7] I. Valov and M. Kozicki, "Non-volatile memories: Organic memristors come of age," Nature Mater., 2017.
[8] G. Indiveri, B. Linares-Barranco, R. Legenstein, G. Deligeorgis,
and T. Prodromakis, "Integration of nanoscale memristor synapses in
neuromorphic computing architectures," Nanotechnology, vol. 24, p.
384010, 2013.
[9] J. J. Yang, D. B. Strukov, and D. R. Stewart, "Memristive devices for
computing," Nature Nanotechnol., vol. 8, pp. 13-24, 2013.
[10] A. Ascoli, R. Tetzlaff, D. Ielmini, and L.O. Chua, "Cellular nonlinear networks with real-world memristors: A paradigm for mem-computing," in Proc. 5th Workshop Memristor Technology Design Automation
and Computing Conf. High Performance and Embedded Architecture and
Compilation, Manchester, 2018.
[11] D. Fey, "Evaluating Ternary Adders using a hybrid Memristor/CMOS
approach," in Proc. Workshop In-Memory and In-Storage Computing with
Emerging Technologies Int. Conf. Parallel Architectures and Compilation
Techniques, 2016.
[12] N. Talati, S. Gupta, P. Mane, and S. Kvatinsky, "Logic design within
memristive memories using memristor aided loGIC (MAGIC)," IEEE
Trans. Nanotechnol., vol. 15, no. 4, pp. 635-650, 2016.
[13] I. Tzouvadaki, N. Aliakbarinodehi, G. De Micheli, and S. Carrara,
"The memristive effect as a novelty in drug monitoring," Nanoscale, vol.
9, pp. 9676-9684, 2017.
[14] B. Ibarlucea, T. F. Akbar, K. Kim, T. Rim, C.-K. Baek, A. Ascoli, R.
Tetzlaff, L. Baraban, and G. Cuniberti, "Ultrasensitive detection of ebola
matrix protein in a memristor mode," NanoResearch, 2017.
[15] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D.
R. Stewart, and R. S. Williams, "Switching dynamics in titanium dioxide
memristive devices," J. Appl. Phys., vol. 106, no. 7, p. 074508, Oct. 2009.
[16] S. H. Jo, K.-H. Kim, and W. Lu, "Programmable resistance switching
in nanoscale two-terminal devices," Nano Lett. Amer. Chem. Soc., vol. 9,
no. 1, pp. 496-500, 2009.
[17] J. P. Strachan, A. Torrezan, F. Miao, M. D. Pickett, J. J. Yang, W. Yi, G.
Medeiros-Ribeiro, and R. S. Williams, "State dynamics and modeling of
Tantalum oxide memristors," IEEE Trans. Electron Devices, vol. 60, no.
7, pp. 2194-2202, 2013.
[18] S. Ambrogio, S. Balatti, D. C. Gilmer, and D. Ielmini, "Analytical modeling of oxide-based bipolar resistive memories and complementary
resistive switches," IEEE Trans. Electron Devices, vol. 61, no. 7, pp. 2378-
2386, 2014.
[19] A. Siemon, S. Menzel, A. Marchewka, Y. Nishi, R. Waser, and E.
Linn, "Simulation of TaOx-based complementary resistive switches by
a physics-based memristive model," in Proc. IEEE Int. Symp. Circuits and
Systems, 2014, pp. 1420-1423.
[20] K. Fleck, C. La Torre, N. Aslam, S. Hoffmann-Eifert, U. B öttger,
and S. Menzel, "Uniting gradual and abrupt SET processes in resistive
switching oxides," Phys. Rev. Appl., vol. 6, p. 064015, 2016.
[21] A. Hardtdegen, C. La Torre, F C üppers, S. Menzel, R. Waser, and
S. Hoffmann-Eifert, "Improved switching stability and the effect of an
internal series resistor in HfO2/TiO2 Bilayer ReRAM cells," IEEE Trans.
Electron. Devices, 2018
[22] Z. Jiang, Y. Wu, S. Yu, L. Yang, K. Song, Z. Karim, and H.-P. Wong,
"A compact model for metal-oxide resistive random access memory
with experiment verification," IEEE Trans. Electron. Devices, vol. 63, pp.
1884-1892, 2016.
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