IEEE Circuits and Systems Magazine - Q2 2018 - 76

[23] L. O. Chua, "Resistance switching memories are memristors," Appl.
Phys. A, vol. 102, pp. 765-783, 2011.
[24] A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model
comparison," IEEE Circuits Syst. Mag., vol. 13, no. 2, pp. 89-105, 2013.
[25] A. Ascoli, R. Tetzlaff, Z. Biolek, Z. Kolka, V. Biolkovà, and D. Biolek,
"The art of finding accurate memristor model solutions," IEEE J. Emerging Select. Topics Circuits Syst., vol. 5, no. 2, pp. 133-142, 2015.
[26] V. Ntinas, A. Ascoli, R. Tetzlaff, and G.C. Sirakoulis, "Transformation techniques applied to a TaO memristor model to enable stable
device simulations," in Proc. IEEE European Conf. Circuit Theory and
Design, 2017.
[27] A. Ascoli, V. Ntinas, R. Tetzlaff, and G. Ch. Sirakoulis, "Closed-form
analytical solution for on-switching dynamics in a TaO memristor, IEEE
IET," Electron. Lett., vol. 53, no. 16, pp. 1125-1126, 2017.
[28] A. Ascoli, R. Tetzlaff, and L. O. Chua, "Robust simulation of a TaO
memristor model," Radioengineering, vol. 24, no. 2, pp. 384-392, June
2015.
[29] L. O. Chua, C. A. Desoer, and E. S. Kuh, Linear and Nonlinear Circuits.
New York: McGraw Hill, 1985
[30] L. O. Chua, Introduction to Nonlinear Network Theory. New York:
McGraw-Hill, 1969.
[31] A. Ascoli, R. Tetzlaff, and M. Biey, "Memristor and memristor circuit
modelling based on methods of nonlinear system theory," in Springer
Lecture Notes on Nonlinear Dynamics in Computational Neuroscience,
F. Corinto and A. Torcini, Eds., DOI: https://doi.org/10.1007/978-3-31971048-8_8.
[32] A. Ascoli, S. Slesazeck, H. Mähne, R. Tetzlaff, and T. Mikolajick,
"Nonlinear dynamics of a locally-active memristor," IEEE Trans. Circuits
Syst. I, vol. 62, no. 4, pp. 1165-1174, 2015.
[33] A. Ascoli, R. Tetzlaff, L. O. Chua, J. P. Strachan, and R. S. Williams, "History erase effect in a non-volatile memristor," IEEE Trans.
Circuits Syst. I, vol. 63, no. 3, pp. 389-400, March 2016, DOI: 10.1109/
TCSI.2016.2525043.
[34] S. Kumar, Z. Wang, N. Davila, N. Kumari, K. J. Norris, X. Huang, J. P.
Strachan, D. Vine, A. L. D. Kilcoyne, Y. Nishi, and R. S. Williams, "Physical origins of current and temperature controlled negative differential
resistances in NbO2," Nature Commun., vol. 8, no. 658, pp. 1-6, 2017.
[35] S. Kumar, J. P. Strachan, and R. S. Williams, "Chaotic dynamics in
nanoscale NbO2 Mott memristors for analogue computing," Nature, vol.
548, no. 7667, pp. 318-321, 2017.
[36] A. Ascoli, P. Curran, and O. Feely, "Modeling the dynamics of
log-domain circuits," Int. J. Circuit Theory Applicat., vol. 35, pp. 33-
70, 2007.
[37] A. Ascoli, D. Baumann, R. Tetzlaff, L.O. Chua, and M. Hild, "Memristor-enhanced humanoid robot control system. Part I: Theory behind
the novel memcomputing paradigm," Int. J. Circuit Theory Applicat., vol.
46, no. 1, pp. 155-183, 2018, DOI: 10.1002/cta.2431.
[38] D. Baumann, A. Ascoli, R. Tetzlaff, L.O. Chua, and M. Hild, "Memristor-enhanced humanoid robot control system. Part II: Circuit theoretic
model and performance analysis," Int. J. Circuit Theory Applicat., vol. 46,
no. 1, pp. 184-220, 2018, DOI: 10.1002/cta.2430.
[39] A. Sebastian, T. Tuma, N. Papandreou, M. Le Gallo, L. Kull, T. Parnell, and E. Eleftheriou, "Temporal correlation detection using computational phase-change memory," Nature Commun., vol. 8, no. 1115, pp.
1-10, 2017.
[40] L. O. Chua, "Everything you wish to know about memristors but are
afraid to ask," Radioengineering, vol. 24, no. 2, pp. 319-368, June 2015.
[41] S. Boyd and L. O. Chua, "Fading memory and the problem of approximating nonlinear operators with Volterra series," IEEE Trans. Circuits
Syst., vol. CAS-32, no. 11, pp. 1150-1161, 1985.
[42] A. Ascoli, R. Tetzlaff, L. O. Chua, J. P. Strachan, and R. S. Williams,
"Memory loss in a tantalum oxide memristor," in Proc. Advances Science
Technology Proc. Int. Conf. Smart Materials Structures Systems, Perugia,
June 5-9, 2016, vol. 99, pp. 94-101.
[43] M. Schetzen, The Volterra and Wiener Theories of Nonlinear Systems. New York: Wiley, 1980.
[44] L. O. Chua, "If it's pinched, it's a memristor," Special Issue Memristive Devices Semicond. Sci. Technol., vol. 29, no. 10, p. 42, Sept. 2014.
[45] A. Ascoli, T. Schmidt, F. Corinto, and R. Tetzlaff, "Application of
the volterra series paradigm to memristive systems," in Memristors and

76

IEEE cIrcuIts and systEms magazInE

Memristive Systems, R. Tetzlaff, Ed. New York: Springer-Verlag, 2014, ch.
5, pp. 163-191.
[46] A. Bauer and W. Schwarz, "Circuit analysis and optimization with
automatically derived Volterra kernels," in Proc. IEEE Int. Symp. Circuits
and Systems, 2000, vol. I, pp. 491-494.
[47] A. Ascoli, R. Tetzlaff, and L. O. Chua, "The first ever real bistable
memristors. Part I: Theoretical insights on local fading memory," IEEE
Trans. Circuits Syst. II, vol. 63, no. 12, pp. 1091-1095, 2016.
[48] A. Ascoli, R. Tetzlaff, and L. O. Chua, "The first ever real bistable
memristors. Part II: Design and analysis of a local fading memory system," IEEE Trans. Circuits Syst. II, vol. 63, no. 12, pp. 1096-1100, 2016.
[49] F. Corinto, P. P. Civalleri, and L. O. Chua, "A theoretical approach to
memristor devices," IEEE Int. J. Emerging Select. Topics Circuits Syst., vol.
5, no. 2, pp. 123-132, 2015.
[50] F. Corinto, A. Ascoli, and M. Gilli, "Nonlinear dynamics of memristor oscillators," IEEE Trans. Circuits Syst. I, vol. 58, no. 6, pp. 1323-1336,
2011.
[51] F. Corinto and M. Forti, "Memristor circuits: Flux-charge analysis
method," IEEE Trans. Circuits Syst. I, vol. 63, no. 11, pp. 1997-2009, 2016.
[52] F. Corinto and M. Forti, "Memristor circuits: Bifurcations without
parameters," IEEE Trans. Circuits Syst. I, vol. 64, no. 6, pp. 1540-1551,
2017.
[53] F. Corinto, A. Ascoli, and M. Gilli, "Memristor models for pattern
recognition systems," in Advances in Neuromorphic Memristor Science
and Applications, R. Kozma, R. Pino, and G. Pazienza, Eds. New York:
Springer, 2012, pp. 245-268.
[54] L.O. Chua, "3 New Theorems on Memristors," in Proc. 7th Workshop Memristors Devices Models Circuits Systems and Applications, Dubrovnik, Croatia, Mar. 12, 2018.
[55] F. Corinto, A. Ascoli, and M. Gilli, "Analysis of current-voltage characteristics for memristive elements in pattern recognition systems," Int.
J. Circuit Theory Appl., vol. 40, no. 12, pp. 1277-1320, 2012.
[56] D. Biolek, Z. Biolek, and V. Biolková, "Pinched hysteretic loops of
ideal memristors, memcapacitors and meminductors must be 'selfcrossing," Electron. Lett., vol. 47, no. 25, pp. 1385-1387, 2011.
[57] Y. V. Pershin, S. La Fontaine, and M. Di Ventra, "Memristive model
of amoeba learning," Phys. Rev. E, vol. 89, p. 021926, 2009.
[58] M. Abramowitz, and I. A. Stegun, Handbook of Mathematical Functions with formulas, Graphs, and Mathematical Tables. National Bureau
of Standards, 1964.
[59] J. Simmons, "Electric tunnel effect between dissimilar electrodes
separated by a thin insulating film," J. Appl. Phys., vol. 34, no. 9, pp.
2581-2590, 1963.
[60] Z. Kolka, D. Biolek, and V. Biolkova, "Improved model of TiO2 memristor," Radioengineering, vol. 24, no. 2, pp. 378-383, 2015.
[61] H. Abdalla and M. D. Pickett, "SPICE modeling of Memristors," in
Proc. IEEE Int. Symp. Circuits and Systems, May 2011, pp. 1832-1835.
[62] A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model
comparison," IEEE Circuits Syst. Mag., vol. 13, no. 2, pp. 89-105, 2013.
[63] P. Sheridan, K.-H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu,
"Device and SPICE modeling of RRAM devices," Nanoscale, vol. 3, pp.
3833-3840, 2011.
[64] A. Siemon, S. Menzel, A. Marchewka, Y. Nishi, R. Waser, and E.
Linn, "Simulation of TaOx-based complementary resistive switches by
a physics-based memristive model," in Proc. IEEE Int. Symp. Circuits and
Systems, 2014.
[65] S. Menzel, A. Siemon, A. Ascoli, and R. Tetzlaff, "Requirements and
challenges for modelling redox-based memristive devices," in Proc.
IEEE Int. Symp. Circuits and Systems, 2018.
[66] E. Linn, A. Siemon, R. Waser, and S. Menzel, "Applicability of wellestablished memristive models for simulations of resistive switching
devices," IEEE Trans. Circuits and Systems, vol. 61, no. 8, pp. 2402-2410,
2014.
[67] S. Menzel, U. Böttger, M. Wimmer, and M. Salinga, "Physics of the
switching kinetics in resistive memories," Adv. Funct. Mater., vol. 25,
no. 40, pp. 6306-6325, 2015.
[68] I. Tzouvadaki, N. Madaboosi, I. Taurino, V. Chu, J.P. Conde, G. De
Micheli, and S. Carrara, "Study on the bio-functionalization of memristive nanowires for optimum memristive biosensors," Journal of Materials Chemistry B, vol. 4, pp. 2153-2162, 2016.

sEcOnd quartEr 2018
https://doi.org/10.1007/978-3-319-71048-8_8 https://doi.org/10.1007/978-3-319-71048-8_8
Table of Contents for the Digital Edition of IEEE Circuits and Systems Magazine - Q2 2018
