IEEE Power Electronics Magazine - March 2020 - 62

LSin

GND

GND

HSin

SW

SW

Vdd

SW

SW

VddF

VIN

VIN

2.6 mm

3.9 mm

FIG 4 The EPC2151 is a fully monolithic implementation of
the circuitry in Figure 3. It was designed to operate as a buck
converter up to 2 MHz with an input up to 80 V and an output of 10 A. The chip measures 10 mm2.

in power loss versus the Si solution. Also shown in Figure
5 is the advantage gained by integrating the driver and
the power FETs on the same chip. The blue line is the
measured efficiency of the identical half-bridge, but with
the driver and level shift in a separate Si-based IC. The
reduced inductance in the gate loop when the driver and
power devices are in intimate contact on the same chip is
the main reason for the significantly improved efficiency.
The half-bridge topology is also useful in many applications beyond dc-dc buck converters. For example, a
second single-chip component from EPC, the EPC2152,
has the same functionality as the EPC2151 monolithic
power stage, but with symmetric high- and low-side
FETs. The EPC2152 was designed to be used in the primary side of an isolated dc-dc converter or for brushless
dc motor drives.
With a well-defined and rich set of scalable models
based on the latest GaN technology platform, the challenge for further integration shifts to adding even more
functionality on a single chip. The ultimate goal is to
achieve a single-component IC that merely requires a
simple digital input from a microcontroller and produces
a power output that drives a load efficiently, reliably
under all conditions, in the smallest space possible, and
economically. To achieve this goal, sensors for current
and temperature will need to be added. In addition, more
digital control functions will also improve performance,
lower cost, and reduce the overall engineering required
of the power system designer. Look for these added features and functions over the next couple of years.
Discrete power transistors, whether Si based or GaNon-Si, are entering their final chapter. Integrated GaNon-Si can offer higher performance in a smaller footprint
with significantly reduced engineering required.

About the Author
Alex Lidow (alex.lidow@epc-co.com) received his B.S.
degree from the California Institute of Technology, Pasadena, in 1975 and his Ph.D. degree in applied physics as
a Hertz Foundation Fellow from Stanford University,



https://www.gowandacomponentsgroup.com/ https://www.itg-electronics.com/

IEEE Power Electronics Magazine - March 2020

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