IEEE Power Electronics Magazine - September 2021 - 69

hard-switching PWM topologies relied
on Si MOSFET power switch improvements
to increase power density and
performance. As the power MOSFET
began its journey of improvement in
figures of merit (FOM) and reduction
of die size vs. R(DS)ON vs. BVDSS (drainto-source
breakdown voltage) to levels
never dreamed of back in the
1980s, all topologies took full advantage
of these power-switch improvements
to reduce the size and weight of
the power system.
Today, many hard-switching topologies
are moving to WBG materials
such as SiC and GaN power MOSFETs
to make further power density and
efficiency gains, especially for highvoltage
and high-power systems.
However, the Si power MOSFET
still stands strong in resonant converter
topologies that Vicor has
invented, most notably the sine
amplitude converter (SAC) topology,
with both a ZVS and ZCS control system.
A clear example of the density
and efficiency that can be achieved is
the Vicor NBM6123, a non-isolated
bidirectional 800-to-400V fixed-ratio
converter, which uses the SAC
topology and Si MOSFETs to achieve
industry-leading specifications of
power density of 10 kW/in3 with 99%
efficiency (Figure 2).
We are often asked: When will
Vicor move to WBG MOSFETs? The
answer is simple: when the merits are
significant enough to justify the
change. Until then, the Si power MOSFET
has longevity in high-performance
power modules, at least at
Vicor. When Rudy Severns first championed
Si power MOSFETs to replace
bipolar transistors, we all knew that
the day would come when a new
technology would, in turn, displace it.
We didn't imagine, however, that the
Si MOSFET would last for nearly four
decades. The time will come when
Vicor's technology will also take
WBG MOSFETs to the next level of
efficiency and power density. But
until then, the tried and true Si power
MOSFET continues to possess longevity
in high-performance power
modules ... at least at Vicor.
About the Author
Phil Davies joined Vicor Corp. in
2011 as corporate vice president of
global sales and marketing in Andover,
MA, USA. Prior to this he served
in various semiconductor product
line, strategic marketing and engineering
positions with Siliconix, Allegro
Microsystems and Analog Devices. He
started his working life in the coal
mines of South Wales UK where he
attended the Polytechnic of Wales
(Now University of Glamorgan) as a
student apprentice and received a BSc
Degree and Masters in Power Electronics.
He has spent 36 years in the
semiconductor industry

http://www.paytongroup.com

IEEE Power Electronics Magazine - September 2021

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - September 2021

Contents
IEEE Power Electronics Magazine - September 2021 - Cover1
IEEE Power Electronics Magazine - September 2021 - Cover2
IEEE Power Electronics Magazine - September 2021 - Contents
IEEE Power Electronics Magazine - September 2021 - 2
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