IEEE Electrification Magazine - September 2013 - 34

S1A

3 Ph ac
Loads

SSPD
2

Zone 2

SSPD
2A

Ship
Service TG

S2

S2A

SSPD
2B

Ship
Service
Battery

S3A

M
VFD
SSPD
2C

Zone 3

SSPD
3

dc/dc
CONV

S2B

1 Ph ac
Loads

PCR
G

SSPD Device Architecture

dc Loads

SSPD
1A

3 Ph ac
Loads

PCR

The second paradigm considers faults occurring downstream of the SSPDs feeding loads within an electrical
zone. For example, in Zone 2 of F
- igure  1, a fault occurs
downstream of SSPD 2C, but upstream of the circuit breakers. In this scenario, the upstream SSPDs will see the same
current as SSPD 2C. The desired reaction is for SSPD 2C to
isolate the fault without any upstream SSPD tripping and
commanding its associated switch
(i.e., S2A, S2B, or S3, assuming the
ship service TG and ship service batZone 1
tery are sources) to open. In this case,
it is assumed that the current rating
of SSPD 2C is low enough to enable
the galvanic isolation mechanism to
INV
be built into the circuit breaker. For
-higher-current-rated SSPDs, the elecM
tromechanical device is physically
From Stbd
too large to be incorporated into the
dc Bus
circuit breaker enclosure.

Port dc Bus

Shore Power

levels, which allows isolation in a time response on the
order of tens of microseconds (as opposed to several hundred milliseconds if the PCR limits the fault current), the
loss of power continuity is minimized. The power interruption is limited only by the response time of the electromechanical switch.

S3

Port dc Bus

INV
M

From Stdb
dc Bus

Figure 1. DC system.
Device
Snubber

Power
Seniconductors

dc Bus +

dc Bus +
Local
Snubber

Device
Snubber

dc Bus -
Figure 2. Unidirectional SSPD architecture.

34

I E E E E l e c t r i f i c atio n Magaz ine / september 2013

Local
Snubber

dc Bus -

SSPDs can be constructed using
many types of power semiconductors, including IGBTs and IGCTs. Both
types of SSPDs have been built and
tested.
The ratings of the SSPD are determined by the voltage and current ratings of the semiconductor power
switches used in the circuit breaker.
Both IGCT-based SSPDs rated at 1,000
V, 1,000 A and IGBT-based SSPDs rated
at 1,000 V, 1,800 A are considered to be
single SSPD building blocks. A unidirectional SSPD has one main currentcarrying semiconductor device, which
can interrupt current in only one
direction, whereas a bidirectional
SSPD has two main current-carrying
semiconductors and can interrupt
current regardless of direction. Figure
2 illustrates the unidirectional SSPD.
Adding another semiconductor to
the unidirectional SSPD in an antiseries configuration yields the bidirectional SSPD shown in Figure 3.
The main advantages of this SSPD
implementation include: 1) reduced
fault-current level due to the fast
device opening speed (operation in
microseconds instead of milliseconds), 2) limitation of arc-flash energy to a much lower level, also due to
the fast breaker opening speed, 3)
superior acoustic performance, and
4) lower maintenance costs.



Table of Contents for the Digital Edition of IEEE Electrification Magazine - September 2013

IEEE Electrification Magazine - September 2013 - Cover1
IEEE Electrification Magazine - September 2013 - Cover2
IEEE Electrification Magazine - September 2013 - 1
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IEEE Electrification Magazine - September 2013 - Cover3
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https://www.nxtbook.com/nxtbooks/pes/electrification_june2018
https://www.nxtbook.com/nxtbooks/pes/electrification_december2017
https://www.nxtbook.com/nxtbooks/pes/electrification_september2017
https://www.nxtbook.com/nxtbooks/pes/electrification_march2018
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