Aerospace & Defense Technology - February 2021 - 37

Tech Briefs

vestigated using the NIEL concept. Previously, several models
have been developed to estimate the NIEL in GaAs using a
Monte Carlo charged particle transport code or based on an
empirically determined damage efficiency.
Although these models provide significant insights into the
correlation between the NIEL and displacement damage, there
remain discrepancies between proton NIEL calculations and experimental measurements in GaAs devices. Determining accurate
damage levels and improving the NIEL model have been an ongoing focus of the Space Radiation Effects Community (SREC).
This work was done by Fei Gao of the University of Michigan for
the Air Force Research Laboratory. For more information, download the Technical Support Package (free white paper) at
www.aerodefensetech.com/tsp under the Electronics & Software category. AFRL-0300

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Naval Research Laboratory, Arlington, Virginia

iobium metal is used in the implantation of a variety of
superconducting quantum devices.
However, the technology is typically limited to use in conventional Josephson junctions based on Nb-AlOx-Nb produced entirely by sputtering. In addition, the devices are most commonly
in a vertical stack covered by niobium metal, making it physically
limited to access the embedded films that could comprise insulators, semiconductor, or hybrids with ions.
There is a need for improvement in the design as well as integration of functional materials for use in devices such as
qubits as well as ion embedded devices for quantum memory.
Also, implementation of large-scale computers requires
nanofabrication technologies. Sending qubits states and implementing quantum networks requires an optical interface.
This research presents nanofabrication processes and results
that address these needs and challenges.
Certain applications require the ability to gate the active region and use multi-terminal configurations. The previously
designed heterostructures with the top niobium electrode
have a problem with this as their optical gating limits access
to the active junction region. A layout was created for the construction of lateral devices where tunneling can occur. That
led to a modified layout based on microwave integrated cirAerospace & Defense Technology, February 2021

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Aerospace & Defense Technology - February 2021

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