Aerospace & Defense Technology - August 2021 - 35

Tech Briefs
LNA _6×25_28G_ms_10V
15
10
5
-5
-10
-15
-20
-25
5 10
28 GHz
-7.414 dB
28 GHz
-12.17 dB
28 GHz
9.516 dB
DB(lS(2,2)l)
Sim_S22_10V
DB(lS(2,1)l)
Meas_S21_10V
DB(lS(2,2)l)
Meas_S22_10V
DB(lS(1,1)l)
Sim_S11_10V
DB(lS(2,2)l)
Sim_S22_10V
DB(lS(2,1)l)
Sim_S21_10V
DB(lS(2,1)l)
Meas_S21_10V
DB(lS(2,2)l)
Meas_S22_10V
DB(lS(1,1)l)
Meas_S11_10V
28 GHz
-6.09 dB
28 GHz
7.9 dB
15 20 25 30 35 40
Frequency (GHz)
Figure 1. Measured (solid) vs. simulation (dash) one-stage 6- × 25-μm LNA (10V)
LNA _6×25_28G_ms_5V
15
10
5
-5
-10
-15
-20
-25
5 10

DB(lS(1,1)l)
MS_S22_5V
DB(lS(2,1)l)
Meas_S21_5V
DB(lS(2,2)l)
Meas_S22_5V
DB(lS(1,1)l)
Sim_S11_5V
DB(lS(2,2)l)
Sim_S22_5V
DB(lS(2,1)l)
Sim_S21_5V
DB(lS(2,1)l)
Meas_S21_5V
DB(lS(2,2)l)
Meas_S22_5V
DB(lS(1,1)l)
Meas_S11_5V
28 GHz
-4.457 dB
28 GHz
-3.329 dB
28 GHz
-5.717 dB
28 GHz
6.394 dB
28 GHz
5.392 dB
  
 
  
 

 
   
     
    
  
  
   
     
    
  

15 20 25 30 35 40
Figure 2. Measured (solid) vs. simulation (dash) one-stage 6- × 25-μm LNA (5 V)
Frequency (GHz)
signed with a goal of several gigahertz
bandwidth centered around 28 GHz.
Various matching topologies, stabilizing
approaches, and tradeoffs of
gain versus noise figure were explored
for two high-electron-mobility transistor
(HEMT) sizes, using the limited
Aerospace & Defense Technology, August 2021
Intro
Cov
devices in the process design kit (PDK)
that had noise data, for 5V or 10V biases.
These designs were intended for
10V operation, so while they work
over biases of 5V to 28V, the targeted
optimal performance is at 10V with a
typical 100-mA/mm drain current.
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