www.pels.org Vol. 6, No. 3 September 2019 For your engineering success Features 18 Gate Drivers for High-Frequency Application of Silicon-Carbide MOSFETs Design considerations for faster growth of LV and MV applications Anup Anurag, Sayan Acharya, and Subhashish Bhattacharya 32 Recent Advances in Gate Driver Integrated Circuits for Wide-Bandgap FETs Manufacturers introduce gate drivers for squeezing the best performance out of WBG devices Ashok Bindra On the cover Gate drivers are the key to squeezing maximum performance out of wide-bandgap power devices. ©ISTOCKPHOTO.COM/HENRIK5000, GaN WAFER-EpiGaN, SiC WAFER-UnitedSiC Departments & Columns 4 8 12 48 52 55 56 61 88 92 39 Control Techniques for Bidirectional Interlinking Converters in Hybrid Microgrids Leveraging the advantages of both ac and dc Xia Shen, Don Tan, Zhikang Shuai, and An Luo 61 From the Editor President's Message Entrepreneur Viewpoint Flyback Women in Engineering Patent Reviews Expert View Society News Event Calendar White Hot Digital Object Identifier 10.1109/MPEL.2019.2924070 September 2019 z IEEE POWER ELECTRONICS MAGAZINE 1http://www.pels.org http://www.ISTOCKPHOTO.COM/HENRIK5000