Antenna Systems & Technology - Winter 2016 - (Page 15)

COMPONENTS / SUBSYSTEMS NEW PRODUCTS & SERVICES Wolfspeed Introduces 50 V Plastic GaN HEMTs for LTE and Radar Wolfspeed, A Cree Company and supplier of GaNon-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50 V/60 W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform. Supplied in miniature (4.5 mm by 6.5 mm), economical, plastic SMT packages, these new devices are suited for LTE, small cell base transceiver station (BTS), radar, public safety radio, and other communications applications. The CGHV27060MP is a 50 V/60 W broadband GaN HEMT with both linear and pulsed applications circuits and no internal input or output match, which allows it to support a wide range of frequencies spanning UHF through 2.7 GHz. Tested at 2.5 GHz, the new GaN HEMT is well suited for LTE micro base station amplifiers with 10 to 15 W average power and high efficiency topologies, such as Doherty or Class A, B, and F amplifiers. Utilizing an S-Band radar circuit, the 50V device provides 16.5 dB gain, 70 percent drain efficiency, and 80W output power at pulsed PSAT with a 100μs pulse width and 10 percent duty cycle. At 14 W PAVE, the device delivers 18.5 dB gain, 35 percent efficiency. This miniature plastic-packaged transistor is also capable of 65W of continuous wave (CW) output power when used in high efficiency amplifier designs. Internally pre-matched on input, and unmatched on output, the CGHV35060MP is a 50V/60W broadband GaN HEMT designed for operation from 2.7 GHz to 3.5 GHz. Tested at 3.3 GHz, the miniature device exhibits 14.5 dB gain with 67 percent drain efficiency, and is optimized for S-Band applications, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications. Additionally, both of the new 50V GaN HEMTs are compatible with industry standard digital pre-distortion (DPD) correction methods to increase amplifier efficiency, and their miniature (4.5 mm by 6.5 mm), plastic overmold packaging makes them an economical solution for higher volume applications. Fabricated on a SiC substrate with a 0.4 μm process, Wolfspeed's GaN-on-SiC HEMTs exhibit improved performance characteristics compared to silicon (Si) and gallium arsenide (GaAs), including higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. Wolfspeed's GaN HEMTs also offer greater power density and wider bandwidths than Si, GaAs, and GaN-on-Si transistors. BAW Coexistence Filter Supports WiFi / LTE RFMW, Ltd. has announced design and sales support for a bulk acoustic wave (BAW) filter designed for 2.4 GHz WLAN/WiFi/ Blue Tooth coexistence with 4G LTE and TD-LTE signals in adjacent bands B7, B41, B38 and B40. The Qorvo 885128 exhibits exceptional rejection performance allowing these various technologies to operate simultaneously and in close proximity. The 885128 offers up to 25 percent less temperature drift than competing technologies and supports extended temperature ranges of -40°C to 95°C. Peak power handling for the Qorvo 885128 is a respectable +36 dBm considering the industry leading small package size of 1.1 by 0.9 by 0.5 mm. With single-ended operation, the 885128 finds applications in access points, set top boxes gaming controllers and small cell radios. www.AntennasOnline.com Winter 2016 Antenna Systems & Technology 15 http://www.AntennasOnline.com

Table of Contents for the Digital Edition of Antenna Systems & Technology - Winter 2016

Contents
Editor’s Choice
Configurable Robotic Millimeter-Wave Antenna Facility
Antennas
Bringing Live Events to the Television Screen
Components/Subsystems
Software / System Design
Test & Measurement
Industry News
Marketplace
DAS Anywhere and Everywhere

Antenna Systems & Technology - Winter 2016