2nd GEn. SiC SCHOTTKY BARRIER dIOdES
Lowest Forward Voltage
High Speed Switching
Lower Power Dissipation
ROHM’s new SCS210AG/AM series of 2nd generation SiC Schottky Barrier Diodes features the industry’s lowest forward voltage
(VF=1.35V) – 10% less than conventional products – reducing power consumption considerably.
Industry-low VF: 1.35V
Key Features
VF - IF Caracteristics
10
Reduced 0.15V
Industry’s lowest forward voltage
IF(A)
Low switching loss
Low dependency on temperature and current
5
New Series
(SCS210AG)
Low power consumption
0
0
Conventional Series
(SCS110AG)
0,5
1
VF(V)
Line Up
SBD BV 600V
8
IF(A)
10
IF(A)
12
IF(A)
TO247 3pin
SCS2AE2C
TO220AC 2pin
SCS2AGC
TO220FM 2pin
SCS2AMC
40
IF(A)
SBD BV 1200V
TO247 3pin
SCS2KE2C
Wafer (Chip)
20
IF(A)
6
IF(A)
(Ta=25°C)
5
IF(A)
1,5
10
IF(A)
15
IF(A)
2
30
IF(A)
40
IF(A)
20
IF(A)
TO220AC 2pin
SCS2KGC
Wafer (Chip)
: Mass production
Applications:
Ideal for power supply circuits in PV (photovoltaic) power conditioners, EV/HEV, transportation, industrial equipment,
servers, air conditioners, and more.
Technology for you
Sense it
Light it
Power it !
www.rohm.com/eu
http://www.rohm.com/web/global/search/parametric/-/search/SiC%2520Schottky%2520Barrier%2520Diodes
Table of Contents for the Digital Edition of EPN March 2013